- 您现在的位置：买卖IC网 > Sheet目录460 > IXTA220N055T7 (IXYS)MOSFET N-CH 55V 220A TO-263-7
IXTA220N055T7
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-263 (7-lead) (IXTA...7) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 30 V, I D = 25 A
R G = 5 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
75
120
7200
1270
285
36
62
53
53
158
42
46
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.35 ° C/W
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -dI/dt = 100 A/ μ s
V R = 25 V, V GS = 0 V
70
220
600
1.0
A
A
V
ns
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592 4,931,844
4,850,072 5,017,508
4,881,106
5,049,961
5,063,307
5,034,796
5,237,481
5,381,025
5,187,117
6,162,665
6,259,123B1
5,486,715
6,404,065B1
6,534,343
6,306,728B1
6,683,344
6,710,405B2
6,583,505
6,727,585
6,759,692
6,710,463
7,005,734B2
7,063,975B2
6,771,478B2
7,063,975B2
7,071,537
7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTA220N055T
MOSFET N-CH 55V 220A TO-263
IXTA220N075T7
MOSFET N-CH 75V 220A TO-263-7
IXTA230N075T2
MOSFET N-CH 75V 230A TO-263
IXTA240N055T7
MOSFET N-CH 55V 240A TO-263-7
IXTA260N055T2-7
MOSFET N-CH 55V 260A TO-263
IXTA2N100P
MOSFET N-CH 1000V 2A TO-263
IXTA2N100
MOSFET N-CH 1000V 2A TO-263
IXTA2N80
MOSFET N-CH 800V 2A TO-263
相关代理商/技术参数
IXTA220N075T
功能描述:MOSFET 220 Amps 75V 4.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA220N075T7
功能描述:MOSFET 220 Amps 75V 4.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA230N075T2
功能描述:MOSFET 230 Amps 75V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA240N055T
功能描述:MOSFET 240 Amps 55V 3.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA240N055T7
功能描述:MOSFET 240 Amps 55V 3.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA24P085T
功能描述:MOSFET 24 Amps 85V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA260N055T2-7
功能描述:MOSFET 260 Amps 55V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA26P10T
功能描述:MOSFET TenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube